| PART |
Description |
Maker |
| SPB100N08S2-07-E6327 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PLASTIC, TO-263, 3 PIN
|
Infineon Technologies AG
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| STI45N10F7 |
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in I2PAK package
|
ST Microelectronics
|
| STL40N10F7 |
N-channel 100 V, 0.02 Ohm typ., 10 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in PowerFLAT(TM) 5x6 package
|
ST Microelectronics
|
| STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package
|
ST Microelectronics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| 2N5754 2N5755 2N5756 2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V.
2.5-A silicon triac. Voltage(typ) 400 V.
2.5-A silicon triac. Voltage(typ) 200 V.
2.5-A silicon triac. Voltage(typ) 100 V.
2.5-A Silicon Triacs
|
General Electric Solid State
Solid State Optronic
N.A.
|
| IRFP23N50LPBF |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
|
International Rectifier
|
| STH80N10F7-2 STD80N10F7 |
Ultra low on-resistance
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| 2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
